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BATOP激光芯片1064nm(Microchip)
品牌： BATOP
型號： MCT-1064-90ps
BATOP激光芯片1064nm(Microchip)
品牌： BATOP
型號： MCT-1064-90ps
BATOP GmbH成立于2003年，是一家隸屬于德國耶拿大學的私人創新型公司。BATOP從事的專業領域包括：低溫分子束外延技術，介質濺射鍍膜，晶圓加工和芯片安裝技術。在過去幾年里， BATOP 已成為一個用于被動鎖模激光器的可飽和吸收體的****的供應商。可飽和吸收產品集合了各式各樣的不同的器件，從可飽和吸收鏡(SAM™)，到可飽和輸出鏡(SOC)和用于透過應用的可飽和吸收體(SA)。迄今為止，可飽和吸收產品已經覆蓋了800nm到2.6μm的常用激光波長范圍。另一個產品系列是用于太赫茲發射和探測的太赫茲光電導天線(PCA)。BATOP不僅提供單帶隙天線，還包括整合了微透鏡的高能大狹縫交叉天線陣列和整套的太赫茲光譜儀。 太赫茲光電導天線的激發波長為800nm到1550nm之間。BATOP借助強大的研發能力來不斷提高自己的產品， 我們始終和客戶在一起，**的滿足他們的需求。
產品介紹
Microchip激光芯片1064nm
The Microchip (MC) consists of a saturable absorber bonded with a Nd:YVO4 laser crystal. It can be used to generate pulsed laser radiation at 1064 nm wavelength if pumped with a diode laser at 808 nm using passively Q-switching.
The main advantage of a laser build with a microchip is the pump power dependent repetition rate with fixed pulse duration and pulse energy. By simply increasing the pump power at 808 nm the repetition rate - and consequently the average output power - will be increased proportionally starting from the laser threshold. The laser output is linear polarized.
MC - Microchip in reflection mode
MCT - Microchip in transmission mode
應用領域
微加工
光探測和測距（激光雷達）
精密測量
頻率轉換
MCT – 傳輸模式微芯片
The Nd:YVO4 laser crystal is bonded with a saturable output coupler (SOC).
The laser output beam is in the same direction as the pump beam.
The laser output is linear polarized.
Part No. | Delivery time | Description |
MCT-1064-90ps | 1 week | Microchip in transmission mode λ = 1064 nm， pulse duration ~ 90 ps， pulse energy ~ 100 nJ， repetition rate 20 kHz - 400 kHz pump wavelength 808 nm |
MCT-1064-220ps | 1 week | Microchip in transmission mode λ = 1064 nm， pulse duration ~ 220 ps， pulse energy ~ 160 nJ， repetition rate 20 kHz - 400 kHz pump wavelength 808 nm |
MCT-1064-90ps
Optical Pump Parameters
| Parameter at T=25°C | Min. | Typ. | Max. |
| Wavelength | 806 nm | 808 nm | 810 nm |
| Optical Pump Power Pp | 70 mW | 150 mW-200 mW | 300 mW |
| Pump Spot Diameter | 25 μm | 40 μm | 100 μm |
| Fluorescent Lifetime | 35 μs (3%) | ||
| Pump Absorption @ 808nm | 85% | 90% | 97，5% |
| Pump Power Density | 5.5 KW/cm2 | 24 KW/cm2* |
Lasing performance with 40μm pump spot size at 25°C
| Parameter at T=25°C | Min. | Typ. | Max. |
| Laser Emission Wavelength | 1064.0nm | 1064.3nm | 1064.6nm |
| Laser Wavelength Drift | 45 pm/100mW** | ||
| Beam Waist Diameter | 40 μm | 100 μm | |
| M2 | 1.1 | 1.3 | 1.5 |
| Pulse Energy | 75 nJ | 90 nJ | 105 nJ |
| Pulse Duration | 80 ps | 90 ps | 110 ps |
| Differential Efficiency | 10% | 20% | 25% |
| Lasing Threshold | 70 mW | 90 mW | 110 mW |
| Polarization Extinction Ratio | 30 | ||
| frep | 20 kHz | 400 kHz | |
| Pp (150mW) | 10 mW | 12 mW | 14 mW |
| Pp (200mW) | 17 mW | 20 mW | 23 mW |
Dependency of the average output power P on the pump power at 808 nm
Dependency of the repetition rate frep on the pump power at 808 nm
脈沖持續時間
脈沖頻譜
Dependency of the relative frequency jitter on the repetition rate fR
